| PART |
Description |
Maker |
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| 2SC2290 E000703 |
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
From old datasheet system
|
Toshiba
|
| M57735 |
50-54 MHz, 12.5V, 19W, SSB Mobile Radio
50-54MHz 12.5V,19W,SSB MOBILE RADIO
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC2879A |
SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) 硅型瑞展230MHz的办学线性功率放大器应用（低电源电压使用
|
Toshiba, Corp.
Toshiba Semiconductor
|
| M57727 57727 |
144-148MHz 12.5V /37W /SSB MOBILE RADIO
144-148MHz 12.5V,37W,SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67728 67728 |
From old datasheet system
430-450MHz,12.5V,55W, SSB MOBILE RADIO
430-450MHz /12.5V /55W / SSB MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M67727 67727 |
144-148MHz /12.5V /60W / SSB MOBILE RADIO
144-148MHz,12.5V,60W, SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| MS1008 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| ST448 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
SGS Thomson
|
| MS1006 |
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| MS1051 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
